2N3035 DATASHEET PDF

2N Specifications: Polarity: NPN ; Package Type: TO, 3 PIN. Details, datasheet, quote on part number: 2N Symbol. Parameter. Value. Unit. 2N 2N VCEO. Collector-Emitter Voltage (IE = 0). V. VCEV. Collector-Emitter Voltage (VBE = V). V. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may.

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The 2N is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids. The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0.

It often has a transition frequency of around 3. The frequency at which gain begins to drop off may be much lower, see below. The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERdatashdet the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor. Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion.

Datasheef total power dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected.

With 23n035 “infinite” heatsink, that is: The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly, [7] [8] [9] else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat.

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Other manufacturers around this time also would specify similar values e. RCA by had changed their specification to give 2. Modern 2N datasheets darasheet, but not always, specify f T of 2. Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency range. Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers.

The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less xatasheet one dollar, and became an industry workhorse standard.

The team of design, production, and applications engineers received RCA Electronic Components achievement awards in The 2N remains very datasueet as a series pass transistor in linear power supplies and is still used in for medium- current and high- power circuits generally, including low eatasheet power converters although its use in audio power amplifiers and DC-to-AC inverters is now less common and its use in higher frequency switch-mode applications never was very practical.

It was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet. With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar dtaasheet was created using epitaxial base technology.

Also the higher frequency response has improved performance when used in audio amplifiers.

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Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies. Since the early s, the 2N transistor has been heavily targeted datwsheet counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings. It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon or Ebay; classic electronics distributors are mostly still able to datashwet source them.

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Variants with higher voltage ratings e.

An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps. The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists.

KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications. It was produced exclusively by the Czechoslovakian electronics company Tesla.

2N Datasheet, PDF – Alldatasheet

KD dqtasheet packaged in a TO-3 case style called T41 by Teslait is a 20 amp80 voltwatt power transistor. It has a transition frequency of 2. The KD have higher power and higher current than 2N From Wikipedia, the free encyclopedia. The art of electronics 2nd ed. The robot builder’s bonanza 2nd ed. Graf; William Sheets Build your own low-power transmitters: The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters.

Retrieved 31 October Retrieved 7 November Retrieved from ” https: Commons category link from Wikidata. Views Read Edit View history. In other projects Wikimedia Commons. This dztasheet was last edited on 22 Novemberat By using this site, you agree to the Terms of Use and Privacy Policy.

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